METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor memory device is provided to increase the capacitance of a capacitor by forming a capacitor storage node having a concave-convex shape. CONSTITUTION: A transistor is formed by forming a gate electrode, a source and a drain on any region of a substrate. A polysilicon for forming a capacitor storage node is deposited on an entire surface of the resultant structure. A photoresist is coated on the polysilicon. The photoresist is exposed by passing through a laser at an optical fiber bundle of inside diameter of 0.1 micrometer. A photoresist pattern is formed by patterning the exposed photoresist layer. A concave-convex is formed on a surface of the polysilicon by etching selectively the surface of the polysilicon using the photoresist pattern as a mask. A capacitor storage node(9A) is formed by patterning selectively the polysilicon having the concave-convex surface.