| 摘要 |
PURPOSE: A field effect transistor and a method for fabricating the same are provided to improve characteristics of the field effect transistor. CONSTITUTION: A source electrode and a drain electrode are formed on a substrate. The first insulating layer is deposited on a whole surface of the substrate including the source electrode and the drain electrode. The first insulating layer sidewall(14b) is formed on one side of the source electrode and the drain electrode. The substrate is etched and a wide recess region is formed thereon by using the first insulating layer sidewall(14b) as a mask. The first photoresist layer is formed on the whole surface of the substrate. The first insulating layer sidewall is exposed by patterning the first photoresist layer. The photoresist layer is removed. The second insulating layer is deposited thereon. The second insulating layer sidewalls(17a,17b) are formed by etching the second insulating layer. The second photoresist layer is formed and patterned thereon. A narrow recess region is formed on the substrate. A gate electrode material is formed on the whole surface of the substrate. A T-shaped gate electrode(20a) is formed by removing the gate electrode material.
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