发明名称 |
Methods of reducing proximity effects in lithographic processes |
摘要 |
Methods of reducing proximity effects in lithographic processes wherein an integrated circuitry pattern is transferred from a mask onto a semiconductor substrate are described. In one embodiment, a desired spacing is defined between a main feature which is to reside on a mask and which is to be transferred onto the substrate, and an adjacent proximity effects-correcting feature. After the spacing definition, the dimensions of the main feature are adjusted relative to the proximity effects-correcting feature to achieve a desired transferred main feature dimension. In another embodiment, a desired spacing is defined between a main feature having an edge and an adjacent sub-resolution feature. The edge of the main feature is moved relative to the sub-resolution feature to achieve a desired transferred main feature dimension.
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申请公布号 |
US2001002304(A1) |
申请公布日期 |
2001.05.31 |
申请号 |
US20010769603 |
申请日期 |
2001.01.24 |
申请人 |
PIERRAT CHRISTOPHE;BURDORF JAMES E.;BAGGENSTOSS WILLIAM;STANTON WILLIAM |
发明人 |
PIERRAT CHRISTOPHE;BURDORF JAMES E.;BAGGENSTOSS WILLIAM;STANTON WILLIAM |
分类号 |
G03F1/08;G03F1/14;G03F7/20;H01L21/027;(IPC1-7):G03F9/00 |
主分类号 |
G03F1/08 |
代理机构 |
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