发明名称 Metallizing dielectric materials comprises applying a photosensitive dielectric to a substrate, irradiating the dielectric through a mask, growing a metal, subjecting to high temperatures and chemically metallizing
摘要 Process for metallizing dielectric materials comprises: (a) applying a photosensitive dielectric to a substrate; (b) either irradiating the dielectric through a mask, growing a metal and subjecting to high temperatures or growing a metal, irradiating through a mask and removing the excess growing material; and (c) chemically metallizing the dielectric. Preferred Features: The dielectric material is made of a photostructured polymer having a high chemical and thermal resistance. The dielectric is grown using a precious metal compound.
申请公布号 DE19957130(A1) 申请公布日期 2001.05.31
申请号 DE19991057130 申请日期 1999.11.26
申请人 INFINEON TECHNOLOGIES AG 发明人 SEZI, RECAI;SCHMID, GUENTER;LOWACK, KLAUS;RADLIK, WOLFGANG;HAUSMANN, JOERG
分类号 C23C18/20;C23C18/16;C23C18/30;H01L21/288;H05K3/18;(IPC1-7):C23C18/18;C23C18/28;H01L21/60 主分类号 C23C18/20
代理机构 代理人
主权项
地址