发明名称 |
Metallizing dielectric materials comprises applying a photosensitive dielectric to a substrate, irradiating the dielectric through a mask, growing a metal, subjecting to high temperatures and chemically metallizing |
摘要 |
Process for metallizing dielectric materials comprises: (a) applying a photosensitive dielectric to a substrate; (b) either irradiating the dielectric through a mask, growing a metal and subjecting to high temperatures or growing a metal, irradiating through a mask and removing the excess growing material; and (c) chemically metallizing the dielectric. Preferred Features: The dielectric material is made of a photostructured polymer having a high chemical and thermal resistance. The dielectric is grown using a precious metal compound.
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申请公布号 |
DE19957130(A1) |
申请公布日期 |
2001.05.31 |
申请号 |
DE19991057130 |
申请日期 |
1999.11.26 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
SEZI, RECAI;SCHMID, GUENTER;LOWACK, KLAUS;RADLIK, WOLFGANG;HAUSMANN, JOERG |
分类号 |
C23C18/20;C23C18/16;C23C18/30;H01L21/288;H05K3/18;(IPC1-7):C23C18/18;C23C18/28;H01L21/60 |
主分类号 |
C23C18/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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