| 摘要 |
<p>A semiconductor light emitting element comprising, laminated sequentially on a substrate, an n-type clad layer, an active layer and a p-type layer containing at least a p-type clad layer, a ridge-formed nitride III-V compound semiconductor being used as the p-type layer, wherein, when a metal film, an insulation film or a nitride III-V compound semiconductor film is provided outside the ridge in contact with the p-type layer, the thickness of a p-type layer existing between the metal film, the insulation film or the nitride III-V compound semiconductor film and an active layer is to be respectively at least 100 nm, at least 76 nm or at least 86 nm. Or, a semiconductor light emitting element comprising, laminated sequentially on a substrate, a p-type clad layer, an active layer and an n-type layer containing at least a n-type clad layer, a ridge-formed nitride III-V compound semiconductor being used as the n-type layer, wherein, when a metal film, an insulation film or a nitride III-V compound semiconductor film is provided outside the ridge in contact with the n-type layer, the thickness of an n-type layer existing between the metal layer, the insulation film or the nitride III-V compound semiconductor film and an active layer is to be respectively at least 20 nm, at least 10 nm or at least 85 nm.</p> |
