SILICON WAFER FOR EPITAXIAL WAFER, EPITAXIAL WAFER, AND METHOD OF MANUFACTURE THEREOF
摘要
<p>A silicon wafer is provided that includes no voids in its surface for epitaxial growth. For example, a nitrogen-doped silicon wafer is heat-treated at 1100 to 1300 DEG C in a non-oxidizing atmosphere, then at 700 to 1300 DEG C in an oxidizing atmosphere while keeping the temperature above 700 DEG C. The epitaxial wafer thus provided is free from epitaxial stacking faults.</p>
