| 摘要 |
<p>Semiconductor substrates (1) with a silicon oxide-containing material (3) to be removed, are subjected to a wet treatment in a bath (4) containing a solution (5) hydrofluoric acid in water. During this wet treatment the conductivity of the solution (5) is monitored and brought to approximately a desired conductivity a time intervals by adding hydrofluoric acid and/or water to the solution (5) inside the bath (4). In order to improve the process stability of the wet treatment of the successive batches of substrates (1) in the solution (5) of hydrofluoric acid in water, and to lengthen the lifetime of the solution (5), the solution (5) is provided with a basic component MX prior to the wet treatment so that the monitored conductivity of the solution (5) decreases as a result of the removal of the silicon oxide-containing material in between the time intervals of the wet treatment.</p> |
