| 摘要 |
A thin-film transistor array includes a substrate, an electrically conductive portion, and a metal layer. The electrically conductive portion is made of one of indium tin oxide, indium oxide, and tin oxide. The electrically conductive portion and the metal layer are formed on a common surface of the substrate. The metal layer includes a first layer and a second layer. The first layer is made of one of aluminum and an aluminum alloy. The second layer extends on the first layer and is made of metal having an oxidization potential nobler than a reduction potential of said one of indium tin oxide, indium oxide, and tin oxide in alkaline aqueous solution.
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