| 摘要 |
The method involves applying test voltages to the memory cells (Cfe, T) during a test procedure. The test voltages are varied in steps to detect memory cells with deformed hysteresis curves. The memory cells are ferroelectric. The plate voltage applied to a ferroelectric storage capacitor is varied, or a reference voltage that is compared with the read voltage read from a memory cell is varied. Alternatively, the voltage applied to a word line, or the write voltage applied to the memory cell is varied.
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