发明名称 Method for testing for holes in semiconductor component using charged particle beam
摘要 The method is used for examining the condition of a large number of holes such as contact holes or through holes formed in a sample. The method involves aligning a charged particle beam onto the sample and detecting the signals given off. The method includes the steps of determining measurement areas on the sample, which contain holes. The beam is then directed onto this area. An electric current which flows between each measurement region and earth is measured. The current distribution data is then determined from the measured absorption currents and, using this data, a brightness image is displayed on a display unit.
申请公布号 DE10059016(A1) 申请公布日期 2001.05.31
申请号 DE20001059016 申请日期 2000.11.28
申请人 JEOL LTD., AKISHIMA 发明人 ISHIMOTO, TORU
分类号 G01N23/225;G01N23/00;G01N27/00;G01Q30/04;G01Q30/20;G01R31/307;H01L21/66;(IPC1-7):G01N27/00;G01R31/26;G01R31/302 主分类号 G01N23/225
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