发明名称 |
Mask and method for forming dynamic random access memory (DRAM) contacts |
摘要 |
A mask (10) includes a pattern (14) having a plurality of substantially rectangular shapes (20) arranged longitudinally in each of a plurality of substantially parallel rows (22). The rows (22) are evenly spaced apart from each other. The substantially rectangular shapes (20) in each row (22) are evenly spaced apart from each other and offset from the substantially rectangular shapes (20) in neighboring rows (22). The substantially rectangular shapes (20) define a plurality of T-shapes (24) connected to and offset from each other.
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申请公布号 |
US2001002332(A1) |
申请公布日期 |
2001.05.31 |
申请号 |
US20010754728 |
申请日期 |
2001.01.04 |
申请人 |
KELEHER MICHAEL P.;MCKEE JEFFREY A.;HERNDON TROY H.;SHU JING-SHING |
发明人 |
KELEHER MICHAEL P.;MCKEE JEFFREY A.;HERNDON TROY H.;SHU JING-SHING |
分类号 |
G03F1/14;H01L21/3213;H01L21/60;H01L21/8242;H01L27/02;(IPC1-7):H01L21/476 |
主分类号 |
G03F1/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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