发明名称 |
INTEGRATED CIRCUIT INDUCTOR WITH HIGH SELF-RESONANCE FREQUENCY |
摘要 |
An integrated circuit inductor structure that includes a shielding pattern that induces a plurality of small eddy currents to shield the magnetic energy generated by the inductor from the substrate of the IC. The IC inductor structure is formed on a Silicon on Insulator (SOI) substrate where the substrate of the SOI has high resistivity. The shielding pattern forms a checkerboard pattern that includes a plurality of conducting regions completely isolated from each other by oxide material. The inductor has a high quality factor and a high self-resonance frequency due to the effective shielding of electromagnetic energy from the substrate of the IC while not reducing the effective inductance of the inductor. |
申请公布号 |
WO0067320(A3) |
申请公布日期 |
2001.05.31 |
申请号 |
WO2000US11798 |
申请日期 |
2000.05.02 |
申请人 |
SILICON WAVE, INC. |
发明人 |
SEEFELDT, JAMES, DOUGLAS;HULL, CHRISTOPHER, D. |
分类号 |
H01L23/522;H01L23/528;H01L23/64 |
主分类号 |
H01L23/522 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|