摘要 |
<p>An output buffer with built-in ESD protection is disclosed. The built-in ESD protection is preferably formed using transistors from the sea-of-transistors or sea-of-gates region (14) of an integrated circuit, which may eliminate the need for dedicated ESD devices, and in particular, dedicated ESD devices that are pre-fabricated into the under-layers in and around the perimeter region (18) of the integrated circuit.</p> |