| 摘要 |
A method for determining wafer misalignment by using a pattern on a fine alignment target. In one embodiment, the method comprises a series of steps in a stepper, starting with the step of receiving a wafer having an alignment target. In another step, the wafer is aligned using the alignment target. Next, a pattern is created around the alignment target using an overlay. Then, the misalignment is determined between the alignment target and the pattern created around the alignment target.
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