| 发明名称 |
SEMICONDUCTOR LASER |
| 摘要 |
<p>A semiconductor laser device according to the present invention comprises a laminated structure of a semiconductor material including an active layer formed of a quantum well structure, a low-reflection film formed on one end face of the structure, and a high-reflection film formed on the other end face of the structure. The cavity length (L) of the device is 1,200 mu m or more. This laser device, which enjoys high kink currents and a satisfactorily linear current-optical output characteristic, is a useful pumping light source for optical fiber amplifier. <IMAGE></p> |
| 申请公布号 |
EP1104054(A1) |
申请公布日期 |
2001.05.30 |
| 申请号 |
EP20000922939 |
申请日期 |
2000.05.01 |
| 申请人 |
THE FURUKAWA ELECTRIC CO., LTD. |
发明人 |
MUKAIHARA, TOSHIKAZU;YAMAGUCHI, TAKEHARU;KASUKAWA, AKIHIKO |
| 分类号 |
H01S5/10;H01S5/20;H01S5/323;H01S5/34;(IPC1-7):H01S5/10;H01S5/343;H01S5/028 |
主分类号 |
H01S5/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
