| 摘要 |
<p>A method for forming, by means of water vapor, an oxidation layer on a number of wafers manufactured from semiconducting material, wherein a number of wafers are disposed one above the other and introduced into a vertical process chamber in which a substantially atmospheric pressure prevails and in which the wafers are brought to an increased temperature and maintained at that temperature, wherein for forming the water vapor, a first gas, containing hydrogen, is mixed with a second gas, containing oxygen, the concentration of hydrogen in the first gas and/or the concentration of oxygen in the second gas and/or the ratio of the flow rates of the first and the second gas being such that during mixing of the first and the second gas, explosion of the third gas mixture formed therefrom is impossible. The invention also relates to a wafer processing furnace suitable and intended for performing the above-described method. <IMAGE></p> |
