| 发明名称 |
Semiconductor device having polysilicon interconnections and method of making same |
| 摘要 |
A doped polysilicon layer is used to form interconnections in a semiconductor device through contact holes. The doped polysilicon layer reaches through contact holes formed in an interlayer insulation layer to reach a suicide layer formed in exposed portions of respective impurity regions.
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| 申请公布号 |
US6239015(B1) |
申请公布日期 |
2001.05.29 |
| 申请号 |
US19980204363 |
申请日期 |
1998.12.04 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JUNG HOON |
| 分类号 |
H01L21/28;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 地址 |
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