| 摘要 |
A method of forming a T-shaped gate. Two insulation layers, each having a different etching rate, are sequentially formed over a conventional gate structure. A planarization of the insulation layer is next carried out. Utilizing the difference in etching rate between the two insulation layers, the insulation layer above the gate structure is removed to expose the gate structure. A conductive layer is then formed over the exposed gate structure. Another planarization is carried out so that only the portion of conductive layer above the gate structure is retained. While using the conductive layer above the gate structure as an etching mask, the two insulation layers are removed. A silicide process is carried out to form a silicide layer over the conductive layer.
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