| 发明名称 |
Multiple threshold voltage semiconductor device fabrication technology |
| 摘要 |
An integrated circuit process technology for simultaneously forming multiple threshold voltage devices is disclosed. Devices having both high speed and low power consumption can be fabricated for use in integrated circuits having a need for both, such as microprocessors having cache memory.
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| 申请公布号 |
US6238982(B1) |
申请公布日期 |
2001.05.29 |
| 申请号 |
US19990289909 |
申请日期 |
1999.04.13 |
| 申请人 |
ADVANCED MICRO DEVICES |
发明人 |
KRIVOKAPIC ZORAN;MILIC OGNJEN |
| 分类号 |
H01L21/8234;H01L29/10;(IPC1-7):H01L21/823;H01L21/00;H01L21/336;H01L21/337;H01L21/338 |
主分类号 |
H01L21/8234 |
| 代理机构 |
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