Method for reading 2-bit ETOX cells using gate induced drain leakage current

摘要

A method of reading a 2-bit memory cell having a drain, a source, a control gate, and a floating gate is disclosed. First, a voltage is applied to the source and drain to generate a gate induced drain leakage (GIDL) current. Next, a measurement is taken of a drain GIDL current at said drain and a source GIDL current at said source to determine the data stored in said memory cell.