METHOD FOR PROCESSING THIN FILM LITHOGRAPHY ELEMENT

摘要

PROBLEM TO BE SOLVED: To obtain optimum conditions for processing of a thin film lithography element by one time of etching when the surface of one glass substrate is provided with fine pattern parts and coarse pattern parts varying in the sizes of the patterns in combination. SOLUTION: The thin film lithography element provided with the fine pattern parts 2 and the coarse pattern parts 3 varying in the sizes of the patterns in combination on the surface of the substrate is arranged with dot patterns 12 approximately equal in the sizes of space parts to the sizes in the space parts of the fine pattern parts in the space parts 10 adjacent to the coarse pattern parts and is etched under the processing conditions optimum for the fine patterns.