SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To prevent an conductive film deposited by plating from forming a gap peeling off in a connecting hole and a wiring groove. SOLUTION: A tantalum barrier conductive film 104 and a copper seed film 105 are deposited in the connecting hole 16a and the wiring groove 16b, prior to forming an embedded wiring in the connecting hole 16a and the wiring groove 16b. Subsequently, a cover conductive film 106 made of metallic material such as tantalum which is hard to constitute compound with copper or which is hardly melted into copper are deposited discontinuously on the seed layer 105.