发明名称 |
Process and device for the production of a single crystal |
摘要 |
A process and device for the production of a single crystal of semiconductor material is by pulling the single crystal from a melt, which is contained in a crucible and is heated by a side heater surrounding the crucible. The melt is additionally heated, in an annular region around the single crystal, by an annular heating device which surrounds the single crystal and is positioned above the melt.
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申请公布号 |
US6238477(B1) |
申请公布日期 |
2001.05.29 |
申请号 |
US20000520290 |
申请日期 |
2000.03.07 |
申请人 |
WACKER SILTRONIC GESELLSCHAFT FüR HALBLEITERMATERIALIEN AG |
发明人 |
VON AMMON WILFRIED;TOMZIG ERICH;VIRBULIS JANIS |
分类号 |
C30B15/14;H01L21/208;(IPC1-7):C30B15/20 |
主分类号 |
C30B15/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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