METHOD FOR ESTIMATING DIAMETER AND TEMPERATURE OF SILICON IN PRODUCTION PROCESS OF POLYCRYSTALLINE SILICON AND METHOD OF OPERATION CONTROL USING THE SAME

摘要

PROBLEM TO BE SOLVED: To highly accurately carry out an operation control when producing a polycrystalline silicon by Siemens method. SOLUTION: The resistivity of a silicon bar installed in a reactor at a specific moment is measured by using values of diameter of the silicon bar and current and voltage impressed to the silicon bar. The temperature of the silicon bar at the specific moment is measured by using the measured resistivity. The vapor growth velocity at the specific moment is measured by using the measured temperature. The diameter of the silicon bar after the lapse of prescribed time is measured by using the measured vapor growth velocity to update the value of the diameter. The diameter and the temperature of the silicon bar are measured at an interval of prescribed time by repeating these steps and these values are controlled.