| 摘要 |
PROBLEM TO BE SOLVED: To provide a GaN light-emitting element, having low contact resistivity of an n-type electrode and low threshold voltage or threshold current. SOLUTION: A GaN light-emitting element comprises an n-type GaN substrate 3002, a plurality of GaN compound semiconductor layers 3003-3010 formed on the substrate 3002, and an n-type electrode 3001 and a p-type electrode 3011 formed on the substrate 3002, the n-type electrode 3001 is formed on the nitrogen termination surface of the substrate 3002, the n-type impurity concentration in the substrate 3002 varies in the thickness direction of the substrate 3002, the substrate 3002 is composed of a first portion 3002a, which forms the nitrogen termination surface and has a first mean n-type impurity concentration and a second portion 3002b, which has a second mean n-type impurity concentration which is lower than that of the first mean n-type impurity concentration, the first mean n-type impurity concentration is 3×10118 cm-3 or more and the second mean n-type impurity concentration is 3×1018 cm-3 or less. |
