| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a prober which is suitably used for the electric test or the like of a semiconductor wafer on which semiconductor ICs are formed collectively. SOLUTION: This manufacturing method refers to a manufacturing method for a prober 10 which is used to measure the electric characteristic of a semiconductor integrated circuit 11a. An etching mask 24 which is formed on a provisional substrate 23 by a photoresist technique is used. An etching treatment is executed to the provisional substrate 23. A plurality of holes 25 for probes 13, corresponding to connecting terminals of the semiconductor integrated circuit 11a are formed, A material 26 for the probes 13 is grown inside the respective holes 25. A support part 24 which couples the probes 13 grown inside the respective holes 25 is formed by growning an insulating material. The provisional substrate 23 is removed, and the respective probes 13 which are combined by the support part 24 are exposed.
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