发明名称 Non-volatile semiconductor memory allowing user to enter various refresh commands
摘要 In a non-volatile flash memory having memory cells divided into blocks, a command state machine decodes a refresh command entered, and sends a decoded result to a write state machine. The write state machine performs a refresh operation in accordance with the decoded result. The nonvolatile flash memory allows a user to enter the refresh command. The refresh command includes "SINGLE BLOCK REFRESH", "FULL CHIP REFRESH", "REFRESH SUSPEND", and "REFRESH RESUME".
申请公布号 US6240032(B1) 申请公布日期 2001.05.29
申请号 US19980199875 申请日期 1998.11.25
申请人 SHARP KABUSHIKI KAISHA 发明人 FUKUMOTO KATSUMI
分类号 G11C16/02;G11C11/56;G11C16/26;G11C16/30;G11C16/34;(IPC1-7):G11C7/00;G11C16/04 主分类号 G11C16/02
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