| 摘要 |
An ion beam sputtering system having a chamber, an ion beam source, multiple targets, a shutter, and a substrate stage for securely holding a wafer substrate during the ion beam sputtered deposition process in the chamber. The substrate stage is made to tilt about its vertical axis such that the flux from the targets hit the wafer substrate at a non-normal angle resulting in improved physical, electrical and magnetic properties as well as the thickness uniformity of the thin films deposited on the substrate in the ion beam sputtering system.
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