发明名称 |
Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution |
摘要 |
A method for preparing a semiconductor member comprises:forming a substrate having a non-porous silicon monocrystalline layer and a porous silicon layer;bonding another substrate having a surface made of an insulating material to the surface of the monocrystalline layer; andetching to remove the porous silicon layer by immersing in an etching solution.
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申请公布号 |
US6238586(B1) |
申请公布日期 |
2001.05.29 |
申请号 |
US19990298056 |
申请日期 |
1999.04.22 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
SAKAGUCHI KIYOFUMI;YONEHARA TAKAO;SATO NOBUHIKO |
分类号 |
H01L21/20;H01L21/306;H01L21/762;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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