发明名称 Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution
摘要 A method for preparing a semiconductor member comprises:forming a substrate having a non-porous silicon monocrystalline layer and a porous silicon layer;bonding another substrate having a surface made of an insulating material to the surface of the monocrystalline layer; andetching to remove the porous silicon layer by immersing in an etching solution.
申请公布号 US6238586(B1) 申请公布日期 2001.05.29
申请号 US19990298056 申请日期 1999.04.22
申请人 CANON KABUSHIKI KAISHA 发明人 SAKAGUCHI KIYOFUMI;YONEHARA TAKAO;SATO NOBUHIKO
分类号 H01L21/20;H01L21/306;H01L21/762;(IPC1-7):H01L21/302 主分类号 H01L21/20
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