发明名称 Synchronous semiconductor integrated circuit capable of improving immunity from malfunctions
摘要 A semiconductor memory device converts an automatic precharge signal, which is an asynchronous control signal, to a synchronous signal and inhibits a synchronous control circuit from an operation with respect to an illegal command in response to the converted signal. An internal malfunction with respect to the illegal command can be prevented due to this structure.
申请公布号 US6240045(B1) 申请公布日期 2001.05.29
申请号 US20000489933 申请日期 2000.01.24
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 HARAGUCHI MASARU;YAMAUCHI TADAAKI;DOSAKA KATSUMI
分类号 G11C11/407;G11C7/10;G11C7/12;G11C7/22;(IPC1-7):G11C7/00 主分类号 G11C11/407
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