发明名称 |
Semiconductor memory device and driving signal generator therefor |
摘要 |
A semiconductor memory device is provided having reduced power consumption during a normal operation. The semiconductor memory device includes a sub word-line defined by segmenting a word-line and a driving signal generator for selectively driving the sub word-line according to a column address. The driving signal generator is controlled by a selection signal corresponding to the column address and a mode signal for specifying an operation mode of the semiconductor memory device. The semiconductor memory device enables part of the word-line according to the column address. The semiconductor memory device using a sub word-line driver to reduce the number of memory cells which are sensed, thereby reducing power consumption.
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申请公布号 |
US6240039(B1) |
申请公布日期 |
2001.05.29 |
申请号 |
US20000524037 |
申请日期 |
2000.03.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JUNG-BAE;YI CHUL-WOO |
分类号 |
G11C11/407;G11C8/10;G11C11/401;G11C11/406;(IPC1-7):G11C8/00 |
主分类号 |
G11C11/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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