FORMATION OF FLUID SILICON LAYER BY REACTION OF ORGANIC SILICON COMPOUND WITH HYDROXYL FORMING COMPOUND

摘要

PROBLEM TO BE SOLVED: To provide a method and an apparatus for evenly depositing silicon oxide layer having a low permittivity used for a gap filling layer in a sub- micron element, a premetal dielectric layer, an intermetal dielectric layer, shallow trench separating dielectric layer and the like. SOLUTION: A silicon oxide layer having a low permittivity is deposited by the reaction of organic silicon compound with a hydroxyl forming compound at the temperature of the substrate, for example, below approximately 400 deg.C. These low permittivity thin films include residual carbon, and useful to gap filling layer in the sub-micron element, the premetal dielectric layer, the interlayer dielectric layer, and the shallow trench separating layer. Before deposition, hydroxyl compound can be processed from water or an organic compound. The silicon oxide layer is preferably deposited at the temperature of the substrate below approximately 40 deg.C on a liner layer formed out of the organic compound, for the purpose of forming the gap filling layer having permittivity approximately below 3.0.