| 摘要 |
This invention discloses a content addressable memory (CAM) cell having a SRAM portion and a tag-compare portion. The tag-compare portion includes six NMOS transistors, designated as M7 to M12, wherein a source of M7 is connected to a drain of M8, a drain of M7 is connected to a match line ML, a source of M8 is grounded; a body of M7 and a body of M8 are tied together at a source of M11, a gate of M7 and a gate of M11 are tied together to a first node n1, a gate of M8 and a drain of M11 are connected to a first digit line DLB; and a source of M9 is connected to a drain of M10, a drain of M9 is connected to said match line ML, a source of M10 is grounded; a body of M9 and a body of M10 are tied together at a source of M12, a gate of M9 and a gate of M12 are tied together to a second node n2, a gate of M10 and a drain of M12 are connected to a second digit line DL. The first and second nodes n1 and n2 are internal storage nodes of the SRAM portion.
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