发明名称 |
Semiconductor memory device and manufacturing method thereof |
摘要 |
The present invention is a high quality semiconductor memory device using a ferroelectric thin film capacitor as a memory capacitor at a high manufacturing yield, the ferroelectric thin film of the capacitor is specified such that the relative standard deviation of crystal grain sizes is 13% or less, to thereby ensure a high remanent polarization value and a small film fatigue (large rewritable number).
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申请公布号 |
US6239457(B1) |
申请公布日期 |
2001.05.29 |
申请号 |
US19990288672 |
申请日期 |
1999.04.09 |
申请人 |
HITACHI, LTD. |
发明人 |
SUENAGA KAZUFUMI;OGATA KIYOSHI;HORIKOSHI KAZUHIKO;TANAKA JUN;KATO HISAYUKI;YOSHIZUMI KEIICHI;ABE HISAHIKO |
分类号 |
G11C11/22;H01L21/02;H01L21/316;(IPC1-7):H01L29/76;H01L27/108;G11C11/24 |
主分类号 |
G11C11/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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