发明名称 LAMINATED STRUCTURE, THIN-FILM POLYCRYSTALLINE SOLAR CELL USING THE SAME AND THIN FILM TRANSISTOR
摘要 <p>PROBLEM TO BE SOLVED: To obtain a laminated structure in which the fine thin film of silicon having arranged crystal orientation is formed, a thin-film polycrystalline solar cell using the laminated structure and a thin film transistor. SOLUTION: This laminated structure which has a substrate 201, an oxide 202 formed on the substrate 201, containing IVB group element and having a layer structure and a thin film 203 of crystalline silicon formed on the oxide 202 is characterized in that one axis of crystalline axes of the oxide 202 is arranged in the vertical direction based on the surface of the substrate 201 and one axis of crystalline axes of the thin film 203 of the crystalline silicon is arranged in the vertical direction based on the surface of the substrate 201.</p>
申请公布号 JP2001146500(A) 申请公布日期 2001.05.29
申请号 JP19990327798 申请日期 1999.11.18
申请人 SHARP CORP 发明人 MURAMOTO MASAHIKO;WADA KENJI
分类号 C30B29/22;C30B29/34;H01L21/205;H01L21/336;H01L29/786;H01L31/04;(IPC1-7):C30B29/22 主分类号 C30B29/22
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