| 摘要 |
<p>PROBLEM TO BE SOLVED: To form films to enhance various kinds of functions such as a conduc tive layer for connection and a conductive layer for accumulated capacitance electrode in the production of an optoelectronic device while avoiding failures such as a short circuit and leakage in the device electrode and wirings. SOLUTION: A barrier layer 80a to connect a TFT 30 and a pixel electrode 9a and to act as a third storage capacitor electrode of a storage capacitor 70 is formed on a substrate 10. In the cross section including the storage capacitor along the direction crossing the extended direction of the capacitor line 3b, the first storage capacitor electrode 1f consisting of a semiconductor layer 1a is a made wider (W1>W2) than a second storage capacitor electrode consisting of a capacitor line 1a, and the second storage capacitor electrode is made narrower (W2>W3) than the third storage capacitor electrode.</p> |
