| 摘要 |
PROBLEM TO BE SOLVED: To enable an SiGe layer, which serves as a base for obtaining a distorted silicon layer to be formed on an insulating layer and reduced in thickness, so as to provide a distorted Si layer of high quality. SOLUTION: A distorted SiGe layer 13 is formed on an Si substrate 11, and oxygen ions are implanted into the distororted SiGe layer 13 so as to stay inside the layer 13. The substrate 11 is subjected to thermal treatment, to cause the distorted SiGe layer 13 to undergo lattice relaxation, and an embedded insulating layer 15 is formed inside the SiGe layer 13. Then, a distorted Si layer 17 is re-grown on the SiGe layer 13 subjected to lattice relaxation.
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