| 摘要 |
PROBLEM TO BE SOLVED: To obtain an excellent electric characteristic by reducing accumulation of thermal hysteresis in an insulating film when the insulating film is produced by oxidizing a silicon layer. SOLUTION: A wafer with a silicon layer is transferred to a vertical heat treating furnace, a processing atmosphere is generated, for example, at 850 deg.C, and a silicon oxide film is formed, for example, by means of wet oxidation with steam. Then heat treatment (anneal process) is performed with the wafer arranged in the heat treating furnace under a processing atmosphere, for example, at 850 deg.C while introducing an N2O gas for a predetermined period of time.
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