| 摘要 |
PROBLEM TO BE SOLVED: To prevent the decline of the driving power of a transistor and the decline of reliability as much as possible. SOLUTION: This device is provided with the transistor provided with a gate insulation film 5 formed on the element area of a semiconductor substrate 2, a gate electrode formed on the gate insulation film and a diffusion layer 9 formed in the element area on both sides of the gate electrode, a side wall insulation film 11 formed at the side of the gate electrode of the transistor, a barrier insulation film 12 formed so as to cover the transistor and the side wall insulation film, and an intermediate film 11 formed between the diffusion layer and the barrier insulation film. The height of the boundary of the intermediate film and the barrier insulation film from the surface of the semiconductor substrate is made higher than the height of the boundary of the gate insulation film and the gate electrode from the surface of the semiconductor substrate.
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