| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having partial SOI structure and the manufacture method. SOLUTION: A lower silicon substrate 21 and an upper silicon pattern 25a which is electrically isolated from the lower silicon substrate 21 by an isolation layer 33a buried in the hole of an inverted T-shape, which is form in the lower silicon substrate 21, are included. A gate insulating film 38 and a gate electrode 39 are formed on an upper silicon pattern 25a, and a source 36 and a drain area 37 and a channel area between them are formed on the upper silicon pattern 25a with the gate electrode 39 as a center. A silicon layer or porous silicon layer 23b is formed below the channel area and it electrically and partially brings it into contact with the lower silicon substrate 1 and the upper silicon patter 2a. Thus, a body contact such as a general semiconductor device can be formed without a separate design change.
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