发明名称 EXHAUST SYSTEM FOR VAPOR DEPOSITION REACTOR
摘要 <p>An improved exhaust conductance system for a CVD reactor includes two exhaust paths (202 and 203) and a three-way valve (201) controlling flow to the exhaust paths. The valve directs flow through a first exhaust conductance path (202) when reactant gas passes through the reactor (98), and through a second exhaust conductance path (203) after reactant gas has been purged from the chamber (98) and only purging gas is flowing through the reactor (98).</p>
申请公布号 WO2001036706(A1) 申请公布日期 2001.05.25
申请号 US2000030789 申请日期 2000.11.06
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