| 摘要 |
PROBLEM TO BE SOLVED: To stably increase a withstand voltage between the base and the collector of a transistor to a sufficiently high level. SOLUTION: A transistor comprises first and second base regions 2, 3, an emitter region 4, first and second collector regions 5, 6a, and a semiconductor region (reserve region) 7 for enhancing a level of withstand voltage. The second collector region 6a is formed opposite to an inner part of the first base region 2 through the first collector region 5, but not opposite to a peripheral part of the first base region 2 and the semiconductor region (reserve region) 7 for enhancing a level of withstand voltage.
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