| 摘要 |
PROBLEM TO BE SOLVED: To solve at once both the problems of planarizing being difficult, when a dummy pattern is large and the data quantity increases taking much time, when the dummy pattern is small. SOLUTION: In a process adopting the shallow trench isolation, small dummy patterns 2 are formed inside a p-well 3 and an n-well 4, and large dummy pattern patterns 1 are formed outside the p-well 3 and the n-well 4.
|
