| 摘要 |
PROBLEM TO BE SOLVED: To suppress dielectric breakdown of a silicon oxide layer, which is generated with direct application of a surge inputted from an electrode pad to a diffused resistor provided within a silicon layer in a semiconductor element formed on an SOI substrate. SOLUTION: This semiconductor device includes a protective element, which is constituted of PMOS5, NMOS6 and a diffused resistor 7 formed in the silicon region 3 of the SOI substrate 4 and a resistance means connected between the diffused resistor 7 and electrode pad. This resistance means is structured with a plurality of through-holes 13 connected in series to be formed on the insulation layer 8. |
