| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device in which high power output operation is stabilized by suppressing wavelength splitting, due to the influence of higher order modes. SOLUTION: On a substrate 511 of n-type GaAs, an n-type clad layer 512 (AlGaAs, Al composition x=0.07, thickness t=2.86μm), an n-type optical waveguide layer 513 (GaAs, t=0.49μm), an n-type carrier blocking layer 514 (AlGaAs, x=0.40, t=0.03μm), an active layer 515 (In0.18Ga0.82As quantum well layer and GaAs barrier layer), a p-type carrier block layer 516 (AlGaAs, x=0.40. t=0.03μm), a p-type optical waveguide layer 517 (GaAs, t=0.49μm), a ptype clad layer 518 (AlGaAs, x=0.20, thickness t=1.08μm), and a p-type capping layer 520 (GaAs) are formed in this order, where a pair of n-type current block layer 519 (GaAs) is embedded inside the p-type capping layer 520.
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