| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a III-V compound semiconductor which is capable of enhancing electron mobility of HEMT. SOLUTION: A channel layer 3, where free electrons travel, is formed on a substrate 1 through an epitaxial growth method, a spacer layer 4 is formed on the channel layer 3, and the spacer layer 4 is doped with oxygen or hydrogen, when a carrier feed layer 5 doped with N-type impurities is formed on the spacer layer 4, by which the electrons mobility is enhanced, so that the electron mobility of HEMT can be enhanced.
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