| 摘要 |
PROBLEM TO BE SOLVED: To solve the problems in prior art that in a circuit, having parallel connected working transistors and transistors being in a stopped state, the working transistors were broken due to the electrostatic discharge(ESD), since the junction breakdown, voltage of the working transistor is lower than the surface breakdown voltage of the transistor being in the stopped state. SOLUTION: In a circuit, having parallel connected working transistors and transistors which are in a stopped state, the gates of the working transistors are surrounded by the gate electrodes, to prevent the working transistors from being broken due to electrostatic discharge.
|
