METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To attain gettering effect surely in an SOI substrate. SOLUTION: An element forming wafer 2 comprising a silicon substrate is prepared and an n+ type layer 4 is formed on one face side of the wafer 2. A crystal defect is then formed by sandblasting on the surface of the element forming wafer 2 where the n+ type layer 4 is formed thus constituting a gettering layer 5. Subsequently, a supporting wafer 1 is prepared and an oxide film 3 is formed on one face side thereof and then the element forming wafer 2 is attached to the supporting wafer 1 such that the oxide film 3 faces the gettering layer 5. Since a crystal defect is formed directly on the surface of the element forming wafer 2 where the n+ type layer 4 is formed, the gettering layer 5 can be formed surely and the quality of a gate oxide film being formed on the element forming wafer 2 can be enhanced.