| 摘要 |
PROBLEM TO BE SOLVED: To relax stresses of a film-covering metal wirings to metal wirings and reduce the inter-line capacitance between the wirings. SOLUTION: By using an SiON film is used as a film (inter-layer insulation film/passivation film) covering metal wirings 10, 20 formed on memory cells composed of floating gates 4, control gates 6, etc. This is intended to reduce the inter-line capacitance between the wirings and reduces the stresses exerted on the metal wirings 10, 20, to thereby suppress the form deterioration of the metal wirings 10, 20.
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