| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate treatment method with which a treatment time can be shortened while a substrate is uniformly heated. SOLUTION: When aging is performed, a vapor containing rate in a treatment gas is made relatively high, for example, for about 40 seconds from the start of the treatment (during a period of (3)). Therefore, a wafer W is uniformly heated. Then (during a period of (4)), the vapor containing rate in the treatment gas is reduced. Therefore, for example, colloid of TEOS contained in an insulating film material applied to the wafer is gelatinized and chaining in a mesh is accelerated. Thus, time for aging is shortened.
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